Growth of good quality InGaN multiple quantum wells by...

Growth of good quality InGaN multiple quantum wells by MOCVD

Annamraju Kasi Viswanath, J.I. Lee, S.T. Kim, Dongho Kim
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Volume:
260
Year:
2004
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2003.08.076
File:
PDF, 208 KB
english, 2004
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