Growth and characterization of InxGa1−xN MQW using a novel...

Journal of Crystal Growth 2004 Vol. 261; Iss. 1

Growth and characterization of InxGa1−xN MQW using a novel method of temperature gradient OMVPE

M.C. Johnson, R.J. Jorgenson, J. Wu, W. Shan, E. Bourret-Courchesne
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Volume:
261
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.jcrysgro.2003.09.020
File:
PDF, 345 KB
english, 2004
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