Effective increase of single-crystalline yield during PVT...

Journal of Crystal Growth 2004 Vol. 262; Iss. 1-4

Effective increase of single-crystalline yield during PVT growth of SiC by tailoring of temperature gradient

Z.G. Herro, B.M. Epelbaum, M. Bickermann, P. Masri, A. Winnacker
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Volume:
262
Year:
2004
Language:
english
Pages:
8
DOI:
10.1016/j.jcrysgro.2003.10.060
File:
PDF, 522 KB
english, 2004
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