Growth of thick, continuous GaN layers on 4-in. Si...

Journal of Crystal Growth 2011 Vol. 314; Iss. 1

Growth of thick, continuous GaN layers on 4-in. Si substrates by metalorganic chemical vapor deposition

H.P.D. Schenk, E. Frayssinet, A. Bavard, D. Rondi, Y. Cordier, M. Kennard
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Volume:
314
Year:
2011
Language:
english
Pages:
7
DOI:
10.1016/j.jcrysgro.2010.10.170
File:
PDF, 1024 KB
english, 2011
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