Variation in Si(1 0 0) surface roughness...

Journal of Crystal Growth 2011 Vol. 318; Iss. 1

Variation in Si(1 0 0) surface roughness caused by H-termination during high-temperature Ar annealing

Koji Araki, Hiromichi Isogai, Ryuji Takeda, Koji Izunome, Xinwei Zhao
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Volume:
318
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.jcrysgro.2010.11.015
File:
PDF, 665 KB
english, 2011
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