The influence of various MOCVD parameters on the growth of...

Journal of Crystal Growth 2011 Vol. 316; Iss. 1

The influence of various MOCVD parameters on the growth of Al1−xInxN ternary alloy on GaN templates

H. Kim-Chauveau, P. de Mierry, J-M. Chauveau, J-Y. Duboz
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Volume:
316
Year:
2011
Language:
english
Pages:
7
DOI:
10.1016/j.jcrysgro.2010.12.040
File:
PDF, 1.81 MB
english, 2011
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