EIS characterization of tantalum and niobium oxide films...

Journal of Electroanalytical Chemistry 2010 Vol. 638; Iss. 1

EIS characterization of tantalum and niobium oxide films based on a modification of the point defect model

Román Cabrera-Sierra, José Manuel Hallen, Jorge Vazquez-Arenas, Gerardo Vázquez, Ignacio González
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Volume:
638
Year:
2010
Language:
english
Pages:
8
DOI:
10.1016/j.jelechem.2009.10.021
File:
PDF, 706 KB
english, 2010
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