Enhanced current gain in SiC power BJTs using a novel...

Microelectronic Engineering 2005 Vol. 81; Iss. 1

Enhanced current gain in SiC power BJTs using a novel surface accumulation layer transistor concept

M. Jagadesh Kumar, Vinod Parihar
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Volume:
81
Year:
2005
Language:
english
Pages:
6
DOI:
10.1016/j.mee.2005.04.002
File:
PDF, 180 KB
english, 2005
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