Two-dimensional numerical simulations of 1/f noise by GR mechanisms in thin film transistors: Effects of induced defect technology
A. Boukhenoufa, L. Pichon, C. CordierVolume:
47
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.microrel.2007.07.059
File:
PDF, 1.10 MB
english, 2007