Characterization of stress degradation effects and thermal...

Microelectronics Reliability 2009 Vol. 49; Iss. 9-11

Characterization of stress degradation effects and thermal properties of AlGaN/GaN HEMTs with photon emission spectral signatures

A. Glowacki, P. Laskowski, C. Boit, Ponky Ivo, Eldad Bahat-Treidel, Reza Pazirandeh, Richard Lossy, Joachim Würfl, Günther Tränkle
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Volume:
49
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.microrel.2009.07.022
File:
PDF, 766 KB
english, 2009
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