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Improvement of high-voltage junction termination extension (JTE) by an optimized profile of lateral doping (VLD)
C. Ronsisvalle, V. EneaVolume:
50
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.microrel.2010.07.078
File:
PDF, 1.42 MB
english, 2010