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AlGaN/GaN HEMT device reliability and degradation evolution: Importance of diffusion processes
Martin Kuball, Milan Ťapajna, Richard J.T. Simms, Mustapha Faqir, Umesh K. MishraVolume:
51
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.microrel.2010.08.014
File:
PDF, 732 KB
english, 2011