Scaling of dislocation cells in GaAs crystals by global...

Materials Science and Engineering: A 2005 Vol. 400-401; Iss. none

Scaling of dislocation cells in GaAs crystals by global numeric simulation and their restraint by in situ control of stoichiometry

P. Rudolph, Ch. Frank-Rotsch, U. Juda, F.-M. Kiessling
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Volume:
400-401
Year:
2005
Language:
english
Pages:
5
DOI:
10.1016/j.msea.2004.12.054
File:
PDF, 430 KB
english, 2005
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