Arsenic diffusion in Si and strained SixGe1−x alloys at...

Arsenic diffusion in Si and strained SixGe1−x alloys at 1000 °C

Suresh Uppal, J.M. Bonar, Jing Zhang, A.F.W. Willoughby
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Volume:
114-115
Year:
2004
Language:
english
Pages:
3
DOI:
10.1016/j.mseb.2004.07.061
File:
PDF, 135 KB
english, 2004
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