Demonstration of AlGaN/GaN metal-oxide-semiconductor high-electron-mobility transistors with silicon-oxy-nitride as the gate insulator
K. Balachander, S. Arulkumaran, T. Egawa, Y. Sano, K. BaskarVolume:
119
Year:
2005
Language:
english
Pages:
5
DOI:
10.1016/j.mseb.2005.01.005
File:
PDF, 289 KB
english, 2005