Spectroscopic studies of Er-centers in MOCVD grown GaN...

Materials Science and Engineering: B 2008 Vol. 146; Iss. 1-3

Spectroscopic studies of Er-centers in MOCVD grown GaN layers highly doped with Er

K. Makarova, M. Stachowicz, V. Glukhanyuk, A. Kozanecki, C. Ugolini, J.Y. Lin, H.X. Jiang, J. Zavada
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Volume:
146
Year:
2008
Language:
english
Pages:
3
DOI:
10.1016/j.mseb.2007.07.032
File:
PDF, 398 KB
english, 2008
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