Optical investigation of stacking faults in 4H–SiC...

Materials Science and Engineering: B 2009 Vol. 165; Iss. 1-2

Optical investigation of stacking faults in 4H–SiC epitaxial layers: Comparison of 3C and 8H polytypes

S. Juillaguet, T. Robert, J. Camassel
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Volume:
165
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.mseb.2008.11.004
File:
PDF, 188 KB
english, 2009
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