Characterization of Active Pixel Sensors fabricated in CMOS...

Nuclear Instruments and Methods in Physics Research Section A: Accelerators, Spectrometers, Detectors and Associated Equipment 2007 Vol. 582; Iss. 3

Characterization of Active Pixel Sensors fabricated in CMOS 0.18 μm technology

D. Passeri, A. Marras, D. Biagetti, P. Placidi, P. Delfanti, L. Servoli, G.M. Bilei
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Volume:
582
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.nima.2007.07.113
File:
PDF, 636 KB
english, 2007
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