Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2008 Vol. 266; Iss. 8
Post-annealing temperature dependence of blistering in high-fluence ion-implanted H in Si 〈1 0 0〉
J.H. Liang, C.Y. Bai, D.S. Chao, C.M. LinVolume:
266
Year:
2008
Language:
english
Pages:
7
DOI:
10.1016/j.nimb.2007.11.045
File:
PDF, 381 KB
english, 2008