Post-annealing temperature dependence of blistering in...

Post-annealing temperature dependence of blistering in high-fluence ion-implanted H in Si 〈1 0 0〉

J.H. Liang, C.Y. Bai, D.S. Chao, C.M. Lin
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Volume:
266
Year:
2008
Language:
english
Pages:
7
DOI:
10.1016/j.nimb.2007.11.045
File:
PDF, 381 KB
english, 2008
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