Sub-surface retention of Pb atoms in silicon after...

Sub-surface retention of Pb atoms in silicon after low-energy ion implantation and electron beam annealing

Andreas Markwitz, Horst Baumann, Perry Davy, Clement Beckert, John Kennedy
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Volume:
266
Year:
2008
Language:
english
Pages:
5
DOI:
10.1016/j.nimb.2008.01.044
File:
PDF, 464 KB
english, 2008
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