Nuclear Instruments and Methods in Physics Research Section B: Beam Interactions with Materials and Atoms
2009 Vol. 267; Iss. 8-9
Impact of implantation on the properties of N2O-nitrided oxides of p+- and n+-gate MOS devices
O.V. Naumova, B.I. Fomin, N.V. Sakharova, M.A. Ilnitsky, V.P. PopovVolume:
267
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.nimb.2009.01.092
File:
PDF, 213 KB
english, 2009