Positron annihilation of defects in silicon deformed at...

Positron annihilation of defects in silicon deformed at different temperatures

H.S. Leipner, V.V. Mikhnovich Jr., V. Bondarenko, Z. Wang, H. Gu, R. Krause-Rehberg, J.-L. Demenet, J. Rabier
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Volume:
340-342
Year:
2003
Language:
english
Pages:
5
DOI:
10.1016/j.physb.2003.09.119
File:
PDF, 221 KB
english, 2003
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