Improvement of electrical property of Si-doped GaN grown on -plane sapphire by metalorganic vapor-phase epitaxy
K. Kusakabe, T. Furuzuki, K. OhkawaVolume:
376-377
Year:
2006
Language:
english
Pages:
3
DOI:
10.1016/j.physb.2005.12.132
File:
PDF, 164 KB
english, 2006