Study of structural changes caused by nanosecond laser...

Radiation Physics and Chemistry 2011 Vol. 80; Iss. 10

Study of structural changes caused by nanosecond laser annealing of Ge- and Sn-implanted Si crystal

D. Klinger, D. Żymierska, R. Minikayev, K. Nowakowska-Langier, J.B. Pelka, L. Nowicki, B. Kozankiewicz, W. Caliebe
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Volume:
80
Year:
2011
Language:
english
Pages:
4
DOI:
10.1016/j.radphyschem.2011.03.017
File:
PDF, 652 KB
english, 2011
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