Influence of gate bias of MISiC-FET gas sensor device on...

Sensors and Actuators B: Chemical 2005 Vol. 108; Iss. 1-2

Influence of gate bias of MISiC-FET gas sensor device on the sensing properties

Shinji Nakagomi, Akira Fukumura, Yoshihiro Kokubun, Susan Savage, Helena Wingbrant, Mike Andersson, Ingemer Lundström, Mikael Löfdahl, Anita Lloyd Spetz
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Volume:
108
Year:
2005
Language:
english
Pages:
7
DOI:
10.1016/j.snb.2004.11.057
File:
PDF, 442 KB
english, 2005
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