SiC-based FET for detection of NOx and O2 using InSnOx as a gate material
M. Ali, V. Cimalla, V. Lebedev, Th. Stauden, G. Ecke, V. Tilak, P. Sandvik, O. AmbacherVolume:
122
Year:
2007
Language:
english
Pages:
5
DOI:
10.1016/j.snb.2006.05.021
File:
PDF, 241 KB
english, 2007