Design consideration of -doping channels for...

Superlattices and Microstructures 2005 Vol. 37; Iss. 1

Design consideration of -doping channels for high-performance n+ - GaAs / p+ -InGaP/n-GaAs camel-gate field effect transistors

Jung-Hui Tsai, Jeng-Shyan Chen, Yu-Jui Chu
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Volume:
37
Year:
2005
Language:
english
Pages:
9
DOI:
10.1016/j.spmi.2004.06.002
File:
PDF, 290 KB
english, 2005
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