Characteristics of InGaP/GaAs heterojunction bipolar...

Superlattices and Microstructures 2006 Vol. 39; Iss. 5

Characteristics of InGaP/GaAs heterojunction bipolar transistors (HBTs) with sulfur treatments

Ssu-I Fu, Shiou-Ying Cheng, Wen-Chau Liu
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Volume:
39
Year:
2006
Language:
english
Pages:
10
DOI:
10.1016/j.spmi.2005.10.002
File:
PDF, 772 KB
english, 2006
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