DLTS study of n-type GaN grown by MOCVD on GaN substrates

DLTS study of n-type GaN grown by MOCVD on GaN substrates

Y. Tokuda, Y. Matsuoka, H. Ueda, O. Ishiguro, N. Soejima, T. Kachi
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Volume:
40
Year:
2006
Language:
english
Pages:
6
DOI:
10.1016/j.spmi.2006.07.025
File:
PDF, 567 KB
english, 2006
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