Optical transitions in Ge nanocrystals formed by high-pressure annealing of Ge+ ion implanted SiO2 films
I.E. Tyschenko, A.B. Talochkin, A.G. Cherkov, K.S. Zhuravlev, R.A. YankovVolume:
129
Year:
2004
Language:
english
Pages:
6
DOI:
10.1016/j.ssc.2003.09.015
File:
PDF, 456 KB
english, 2004