A closed-form charge-based expression for drain current in...

Solid-State Electronics 2006 Vol. 50; Iss. 4

A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET

A.S. Roy, J.M. Sallese, C.C. Enz
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Volume:
50
Year:
2006
Language:
english
Pages:
7
DOI:
10.1016/j.sse.2006.03.021
File:
PDF, 246 KB
english, 2006
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