A robust 45 nm gate-length CMOSFET for...

Solid-State Electronics 2006 Vol. 50; Iss. 4

A robust 45 nm gate-length CMOSFET for 90 nm Hi-speed technology

K.Y. Lim, V. Chan, R. Rengarajan, H.K. Lee, N. Rovedo, E.H. Lim, S. Yang, F. Jamin, P. Nguyen, W. Lin, C.W. Lai, Y.W. Teh, J. Lee, L. Kim, Z. Luo, H. Ng, J. Sudijono, C. Wann, I. Yang
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Volume:
50
Year:
2006
Language:
english
Pages:
8
DOI:
10.1016/j.sse.2006.03.031
File:
PDF, 756 KB
english, 2006
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