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Microscopic modeling of hole inversion layer mobility in unstrained and uniaxially stressed Si on arbitrarily oriented substrates
A.T. Pham, C. Jungemann, B. MeinerzhagenVolume:
52
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2008.04.006
File:
PDF, 429 KB
english, 2008