Efficient simulation of hole transport in strained Si and SiGe on insulator inversion layers
A.T. Pham, C. Jungemann, M. Klawitter, B. MeinerzhagenVolume:
52
Year:
2008
Language:
english
Pages:
9
DOI:
10.1016/j.sse.2008.06.016
File:
PDF, 488 KB
english, 2008