Impact of strain and source/drain engineering on the low frequency noise behaviour in n-channel tri-gate FinFETs
W. Guo, B. Cretu, J.-M. Routoure, R. Carin, E. Simoen, A. Mercha, N. Collaert, S. Put, C. ClaeysVolume:
52
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2008.06.055
File:
PDF, 766 KB
english, 2008