On the breakdown behaviors of InP/InGaAs based...

On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)

Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, Wen-Chau Liu
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Volume:
53
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2008.11.003
File:
PDF, 344 KB
english, 2009
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