![](/img/cover-not-exists.png)
On the breakdown behaviors of InP/InGaAs based heterojunction bipolar transistors (HBTs)
Tzu-Pin Chen, Chi-Jhung Lee, Wen-Shiung Lour, Der-Feng Guo, Jung-Hui Tsai, Wen-Chau LiuVolume:
53
Year:
2009
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2008.11.003
File:
PDF, 344 KB
english, 2009