1/f Noise and trap density in n-channel strained-Si/SiGe...

Solid-State Electronics 2009 Vol. 53; Iss. 6

1/f Noise and trap density in n-channel strained-Si/SiGe modulation doped field effect transistors

Kristel Fobelets, Sergey L. Rumyantsev, Thomas Hackbarth, Michael S. Shur
How much do you like this book?
What’s the quality of the file?
Download the book for quality assessment
What’s the quality of the downloaded files?
Volume:
53
Year:
2009
Language:
english
Pages:
4
DOI:
10.1016/j.sse.2009.03.022
File:
PDF, 271 KB
english, 2009
Conversion to is in progress
Conversion to is failed