Electron subband structure in strained silicon UTB films...

Electron subband structure in strained silicon UTB films from the Hensel–Hasegawa–Nakayama model – Part 1 analytical consideration and strain-induced valley splitting

Thomas Windbacher, Viktor Sverdlov, Oskar Baumgartner, Siegfried Selberherr
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Volume:
54
Year:
2010
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2009.12.008
File:
PDF, 882 KB
english, 2010
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