Low-temperature characterization and modeling of advanced GeOI pMOSFETs: Mobility mechanisms and origin of the parasitic conduction
W. Van Den Daele, E. Augendre, C. Le Royer, J.-F. Damlencourt, B. Grandchamp, S. CristoloveanuVolume:
54
Year:
2010
Language:
english
Pages:
8
DOI:
10.1016/j.sse.2009.12.020
File:
PDF, 1.83 MB
english, 2010