A comparison of plasma-induced damage on the reliability...

Solid-State Electronics 2010 Vol. 54; Iss. 4

A comparison of plasma-induced damage on the reliability between high-k/metal-gate and SiO2/poly-gate complementary metal oxide semiconductor technology

Wu-Te Weng, Yao-Jen Lee, Horng-Chih Lin, Tiao-Yuan Huang
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Volume:
54
Year:
2010
Language:
english
Pages:
10
DOI:
10.1016/j.sse.2010.01.007
File:
PDF, 1.34 MB
english, 2010
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