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Al0.2Ga0.8As/In0.15Ga0.85As MOSPHEMT with low temperature LPD-deposited Al2O3 as gate dielectric
Sarbani Basu, Pramod K. Singh, Po-Wen Sze, Yeong-Her WangVolume:
54
Year:
2010
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2010.03.021
File:
PDF, 817 KB
english, 2010