High mobility CMOS: First demonstration of planar GeOI...

Solid-State Electronics 2011 Vol. 59; Iss. 1

High mobility CMOS: First demonstration of planar GeOI p-FETs with SOI n-FETs

C. Le Royer, J.-F. Damlencourt, B. Vincent, K. Romanjek, Y. Le Cunff, H. Grampeix, V. Mazzocchi, V. Carron, F. Némouchi, J.-M. Hartmann, C. Arvet, C. Vizioz, C. Tabone, L. Hutin, P. Batude, M. Vinet
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Volume:
59
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2011.01.012
File:
PDF, 1.05 MB
english, 2011
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