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Influence of the sidewall crystal orientation, HfSiO nitridation and TiN metal gate thickness on n-MuGFETs under analog operation
M. Rodrigues, M. Galeti, J.A. Martino, N. Collaert, E. Simoen, C. ClaeysVolume:
62
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2011.04.002
File:
PDF, 640 KB
english, 2011