Extraction of trap densities in entire bandgap of poly-Si...

Solid-State Electronics 2011 Vol. 63; Iss. 1

Extraction of trap densities in entire bandgap of poly-Si thin-film transistors fabricated by solid-phase crystallization and dependence on process conditions of post annealing

Mutsumi Kimura
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Volume:
63
Year:
2011
Language:
english
Pages:
6
DOI:
10.1016/j.sse.2011.05.002
File:
PDF, 837 KB
english, 2011
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