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Resistive switching behavior of La-doped ZnO films for nonvolatile memory applications
M.H. Tang, Z.Q. Zeng, J.C. Li, Z.P. Wang, X.L. Xu, G.Y. Wang, L.B. Zhang, S.B. Yang, Y.G. Xiao, B. JiangVolume:
63
Year:
2011
Language:
english
Pages:
5
DOI:
10.1016/j.sse.2011.05.023
File:
PDF, 1.08 MB
english, 2011