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Ordered growth of germanium dots induced by the strain field of tilt dislocations in molecular bonded silicon (0 0 1) thin films
V. Poydenot, R. Dujardin, J.L. Rouvière, A. Barski, J. Mezière, F. FournelVolume:
600
Year:
2006
Language:
english
Pages:
1
DOI:
10.1016/j.susc.2006.03.020
File:
PDF, 321 KB
english, 2006