Complete prevention of reaction at HfO2/Si interfaces by...

Surface Science 2008 Vol. 602; Iss. 11

Complete prevention of reaction at HfO2/Si interfaces by 1 nm silicon nitride layer

Hikaru Kobayashi, Kentaro Imamura, Ken-ichi Fukayama, Sung-Soon Im, Osamu Maida, Young-Bae Kim, Hyun-Chul Kim, Duck-Kyun Choi
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Volume:
602
Year:
2008
Language:
english
Pages:
6
DOI:
10.1016/j.susc.2008.03.031
File:
PDF, 477 KB
english, 2008
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