Secondary electron yield enhancement by MgO capping layers

Surface Science 2010 Vol. 604; Iss. 2

Secondary electron yield enhancement by MgO capping layers

S. Altieri, M. Finazzi, H.H. Hsieh, H.-J. Lin, C.T. Chen, S. Valeri, L.H. Tjeng
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Volume:
604
Year:
2010
Language:
english
Pages:
5
DOI:
10.1016/j.susc.2009.11.004
File:
PDF, 282 KB
english, 2010
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