Dominant rate process of silicon surface etching by hydrogen chloride gas
Hitoshi Habuka, Takahiro Suzuki, Sunao Yamamoto, Akio Nakamura, Takashi Takeuchi, Masahiko AiharaVolume:
489
Year:
2005
Language:
english
Pages:
7
DOI:
10.1016/j.tsf.2005.04.121
File:
PDF, 287 KB
english, 2005