Dominant rate process of silicon surface etching by...

Dominant rate process of silicon surface etching by hydrogen chloride gas

Hitoshi Habuka, Takahiro Suzuki, Sunao Yamamoto, Akio Nakamura, Takashi Takeuchi, Masahiko Aihara
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Volume:
489
Year:
2005
Language:
english
Pages:
7
DOI:
10.1016/j.tsf.2005.04.121
File:
PDF, 287 KB
english, 2005
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