Growth of thick GaN on the (0001) Al2O3 substrate by...

Thin Solid Films 2006 Vol. 498; Iss. 1-2

Growth of thick GaN on the (0001) Al2O3 substrate by hydride-metal organic vapor phase epitaxy

Chinho Park, Seokki Yeo, Jin-ho Kim, Deoksun Yoon, Timothy J. Anderson
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Volume:
498
Year:
2006
Language:
english
Pages:
6
DOI:
10.1016/j.tsf.2005.07.077
File:
PDF, 537 KB
english, 2006
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